| PART |
Description |
Maker |
| HYS72D64301HBR-5-C HYS72D64301HBR-6-C HYS72D256320 |
184-Pin Registered Double-Data-Rate SDRAM Module
|
Qimonda AG
|
| HYS72D128320 HYS72D128320GBR-6-C HYS72D128320GBR-7 |
184-Pin Registered Double Data Rate SDRAM Module
|
Qimonda AG
|
| HYS72D128321HBR-5-C HYS72D256320HBR-5-C HYS72D1283 |
184-Pin Registered Double-Data-Rate SDRAM Module
|
http://
|
| HYS72D32300HBR-7-C HYS72D32300GBR-5-C HYS72D64320G |
184-Pin Registered Double Data Rate SDRAM Module 128M X 72 DDR DRAM MODULE, 0.75 ns, DMA184
184-Pin Registered Double Data Rate SDRAM Module 32M X 72 DDR DRAM MODULE, 0.5 ns, DMA184
|
Qimonda AG
http://
|
| HYS64D128320HU-5-B HYS72D128320HU-5-B HYS64D64300H |
42184-Pin Unbuffered Double-Data-Rate Memory Modules
|
Qimonda AG
|
| HYS72D64320 HYS72D64320HBR-5-C |
184-Pin Registered Double Data Rate SDRAM Module 64M X 72 DDR DRAM MODULE, 0.5 ns, DMA184
|
Qimonda AG
|
| M470L6524DU0-LCC M470L2923DV0-CA2 M470L2923DV0-CB0 |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb D-die 66 TSOP-II & 54 sTSOP-II with Pb-Free (RoHS compliant)
|
SAMSUNG[Samsung semiconductor]
|
| EM423M3284LBA-8FE EM424M3284LBA-75FE EM424M3284LBA |
512Mb (4MBank2) Double DATA RATE SDRAM
512Mb (4MBank32) Double DATA RATE SDRAM
512Mb (4M4Bank2) Double DATA RATE SDRAM
|
Electronic Theatre Controls, Inc.
|
| M470L3324DU0-LB0 M470L2923DV0-LB0 M470L2923DV0-LB3 |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb D-die 66 TSOP-II & 54 sTSOP-II with Pb-Free (RoHS compliant) DDR SDRAM的缓冲模8 4针缓冲模块的512MBD为基础的模6 TSOP-II
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb D-die 66 TSOP-II & 54 sTSOP-II with Pb-Free (RoHS compliant) DDR SDRAM的缓冲模18 4针缓冲模块的512MB的D为基础的模6 TSOP-II
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb D-die 66 TSOP-II & 54 sTSOP-II with Pb-Free (RoHS compliant)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| M470L6524C M470L6524CU0-LCC M470L3324CU0-CA2 M470L |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb C-die DDR SDRAM的缓冲模8 4针缓冲模块的基于C12Mb芯片
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| MT8VDDT3264AG-40BC4 |
256MB, 512MB (x64, SR) 184-Pin DDR SDRAM UDIMM
|
Micron Technology
|
